Name
Abstract | ||
|---|---|---|
Using Polysilicon Gate Separated Schottky Diode structures that can be fabricated without any process modifications in a foundry digital 130-nm CMOS process, cut-off frequency of ~2 THz has been measured. In addition, exploiting the complementary of CMOS technology, an anti-parallel diode pair with cut-off frequency of ~660 GHz consisting of an n-type and a p-type Schottky diode has been demonstrated in the same 130-nm CMOS process. Using the diodes, a frequency doubler and a tripler have been demonstrated. Additionally, the diodes have been utilized to implement 280-GHz and 860-GHz detectors for imaging. A fully-integrated 280-GHz 4×4 imager array exhibits measured NEP of 29pW/Hz½ and responsivity of 5.1kV/W (323V/W without the amplifier). The 860-GHz detector without an amplifier achieves responsivity of 355V/W and NEP of 32pW/Hz½. The NEP at 860GHz is 2X better than the best reported performance of MOSFET-based imagers without a silicon lens attached to the chip. |
Year | DOI | Venue |
|---|---|---|
2013 | 10.1109/SiRF.2013.6489420 | RWS |
Keywords | Field | DocType |
cmos process,cmos integrated circuits,frequency multiplication,digital cmos process,cmos,frequency doubler,terahertz circuits,antiparallel diode pair,millimeter wave,n-type schottky diode,frequency 860 ghz,submillimetre wave detectors,detectors,frequency 2 thz,frequency tripler,size 130 nm,schottky diodes,schottky barrier diode,submillimetre wave circuits,millimetre wave detectors,sub-millimeter wave,mosfet-based imagers,terahertz wave detectors,anti- parallel diode pair,p-type schottky diode,imager,process modifications,terahertz,wavelength 130 nm,polysilicon gate separated schottky diode structure,frequency 660 ghz,frequency 280 ghz,terahertz wave imaging,polysilicon gate separated schottky diode structures,mosfet | Responsivity,Diode,CMOS,Frequency multiplier,Schottky diode,MOSFET,Electronic circuit,Optoelectronics,Materials science,Amplifier | Conference |
ISSN | ISBN | Citations |
2164-2958 E-ISBN : 978-1-4673-2931-6 | 978-1-4673-1551-7 | 0 |
PageRank | References | Authors |
0.34 | 4 | 10 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yaming Zhang | 1 | 49 | 9.92 |
| Ruonan Han | 2 | 152 | 27.20 |
| Young-Wan Kim | 3 | 34 | 5.86 |
| Dae Yeon Kim | 4 | 32 | 5.11 |
| Hisashi Shichijo | 5 | 28 | 3.96 |
| Swaminathan Sankaran | 6 | 32 | 7.79 |
| Chuying Mao | 7 | 20 | 4.35 |
| Eunyoung Seok | 8 | 58 | 10.30 |
| Dongha Shim | 9 | 27 | 7.01 |
| K. O. Kenneth | 10 | 10 | 3.54 |