Name
Abstract | ||
|---|---|---|
In this paper, we compare embedded-DRAM (eDRAM) testing to both SRAM testing and commodity-DRAM testing, since an eDRAM macro uses DRAM cells with an SRAM interface. We first start from an standard SRAM test algorithm and discuss the faults which are not covered in the SRAM testing but should be considered in the DRAM testing. Then we study the behavior of those faults and the tests which can detect them. Also, we discuss how likely each modeled fault may occur on eDRAMs and commodity DRAMs, respectively. |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1145/1629911.1630097 | DAC |
Keywords | Field | DocType |
dram testing,edram macro,standard sram test algorithm,sram interface,fault model,commodity drams,dram cell,commodity-dram testing,embedded-dram macro,sram testing,macros,testing,couplings,embedded systems,capacitors,metals,system testing,frequency | Dram,Capacitor,Test algorithm,Computer science,Real-time computing,Memory testing,Static random-access memory,eDRAM,Macro,Fault model,Embedded system | Conference |
ISSN | ISBN | Citations |
0738-100X | 978-1-6055-8497-3 | 7 |
PageRank | References | Authors |
0.68 | 13 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Mango C.-T. Chao | 1 | 48 | 7.38 |
| Hao-Yu Yang | 2 | 27 | 4.88 |
| Rei-Fu Huang | 3 | 165 | 13.15 |
| Shih-Chin Lin | 4 | 18 | 1.87 |
| Ching-Yu Chin | 5 | 42 | 4.57 |