Title
A CMOS Beta Multiplier Voltage Reference with Improved Temperature Performance and Silicon Tunability
Abstract
A new implementation has been proposed for the beta multiplier voltage reference to improve its performance with regard to process variations. The scope for silicon tunability on the proposed circuit is also discussed. The circuit was implemented in a 0.18 μ process and was found to have a temperature sensitivity of less than 500 ppm/C in the virgin die without trimming.
Year
DOI
Venue
2004
10.1109/ICVD.2004.1260977
VLSI Design
Keywords
Field
DocType
silicon tunability,new implementation,improved temperature performance,cmos beta multiplier voltage,virgin diewithout trimming,thebeta multiplier voltage reference,proposed circuit isalso,process variation,trimming,photonic band gap,silicon,semiconductor device modeling,intrusion detection,threshold voltage,cmos integrated circuits
Hybrid silicon laser,Computer science,Voltage reference,Electronic engineering,CMOS,Multiplier (economics),Silicon bandgap temperature sensor,Trimming,Bandgap voltage reference,Silicon
Conference
ISBN
Citations 
PageRank 
0-7695-2072-3
4
1.03
References 
Authors
0
2
Name
Order
Citations
PageRank
S. S. Prasad141.03
Pradip Mandal28423.04