Name
Abstract | ||
|---|---|---|
Sixty-gigahertz power (PA) and low-noise (LNA) amplifiers have been implemented, based on algorithmic design methodologies for mm-wave CMOS amplifiers, in a 90-nm RF-CMOS process with thick 9-metal-layer Cu backend and transistor fT/fMAX of 120 GHz/200 GHz. The PA, fabricated for the first time in CMOS at 60 GHz, operates from a 1.5-V supply with 5.2 dB power gain, a 3-dB bandwidth >13 GHz, a P 1dB of +6.4 dBm with 7% PAE and a saturated output power of +9.3 dBm at 60 GHz. The LNA represents the first 90-nm CMOS implementation at 60 GHz and demonstrates improvements in noise, gain and power dissipation compared to earlier 60-GHz LNAs in 160-GHz SiGe HBT and 0.13-mum CMOS technologies. It features 14.6 dB gain, an IIP 3 of -6.8 dBm, and a noise figure lower than 5.5 dB, while drawing 16 mA from a 1.5-V supply. The use of spiral inductors for on-chip matching results in highly compact layouts, with the total PA and LNA die areas with pads measuring 0.35times0.43 mm2 and 0.35times0.40 mm2, respectively |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1109/JSSC.2007.894325 | Solid-State Circuits, IEEE Journal of |
Keywords | Field | DocType |
200 ghz,cmos analogue integrated circuits,characteristic current densities,90 nm,low-noise amplifier (lna),5.2 db,60 ghz,low noise amplifiers,spiral inductors,$f_{rm t}$,receiver,power amplifier,noise figure,thick 9-metal-layer cu backend,1.5 v,160 ghz,transformers,mm-wave cmos amplifiers,millimeter-wave,$f_{rm max}$,cmos low noise amplifier,16 ma,rf-cmos process,millimetre wave power amplifiers,power amplifier (pa),v-band,field effect mimic,120 ghz,heterojunction bipolar transistor,14.6 db,cmos millimeter-wave integrated circuits,0.13 micron,inductors,chip,power generation,gain,integrated circuit,millimeter wave,algorithm design,current density,power dissipation,cmos technology,low noise amplifier,design methodology,algorithm design and analysis,bandwidth | Power gain,Low-noise amplifier,Computer science,Noise figure,CMOS,Electronic engineering,Heterojunction bipolar transistor,Transistor,Electrical engineering,V band,Amplifier | Journal |
Volume | Issue | ISSN |
42 | 5 | 0018-9200 |
Citations | PageRank | References |
75 | 20.30 | 4 |
Authors | ||
7 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Terry Yao | 1 | 75 | 20.30 |
| Michael Q. Gordon | 2 | 115 | 24.93 |
| Keith K. W. Tang | 3 | 75 | 20.30 |
| Kenneth H. K. Yau | 4 | 88 | 22.21 |
| Ming-Ta Yang | 5 | 93 | 25.04 |
| Peter Schvan | 6 | 147 | 37.29 |
| Sorin P. Voinigescu | 7 | 221 | 53.57 |