Abstract | ||
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This live demonstration presents a high fill factor 6 transistor per pixel CMOS image sensor (CIS) based on a single inverter that modulates light illumination to pulse width supporting ultra low supply voltage requirements. It has a compact readout circuitry for pulse-based signal processing without A/D converter at the output. A 64 × 64 pixel array was fabricated using 130 nm CMOS technology. The chip operated under a +VDD as low as 500 mV with power consumption of only 27 nW per pixel. The fill factor is 58%, which is significantly larger than those conventional CMOS imagers. |
Year | DOI | Venue |
---|---|---|
2012 | 10.1109/ISCAS.2012.6272142 | ISCAS |
Keywords | Field | DocType |
single inverter architecture,pulse-based signal processing,signal processing,analogue-digital conversion,cmos image sensors,high fill factor,light illumination,a/d converter,transistor per pixel,cmos image sensor,transistors,cmos integrated circuits,computer architecture,lighting,photodiodes | Inverter,FO4,Computer science,Pulse-width modulation,Electronic engineering,Chip,CMOS sensor,CMOS,Transistor,Electrical engineering,Photodiode | Conference |
ISSN | ISBN | Citations |
0271-4302 | 978-1-4673-0218-0 | 0 |
PageRank | References | Authors |
0.34 | 1 | 4 |
Name | Order | Citations | PageRank |
---|---|---|---|
Sang-jin Lee | 1 | 360 | 40.96 |
Omid Kavehei | 2 | 273 | 31.47 |
Kamran Eshraghian | 3 | 101 | 27.54 |
Kyoung-Rok Cho | 4 | 217 | 31.77 |