Name
Abstract | ||
|---|---|---|
After the results of a previous work [1], intermediate robustness of GaN/InGaN-on sapphire blue LEDs vs. ESD stress is investigated. Different from other cases, no evidence for defect-related weakness is available. The role of resistive current paths in focusing the flow of charge and the voltage peaks under both de and transient conditions is then considered, by means of simple considerations on a distributed network of elementary diodes and resistors representing the main electrical features of the LED structure. EL and EBIC maps on both regular and failed devices support the proposed interpretation. (C) 2001 Published by Elsevier Science Ltd. |
Year | DOI | Venue |
|---|---|---|
2001 | 10.1016/S0026-2714(01)00201-3 | Microelectronics Reliability |
Field | DocType | Volume |
Electronic engineering,Engineering,Light-emitting diode,Sapphire,Optoelectronics | Journal | 41 |
Issue | ISSN | Citations |
9 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 0 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| G. Meneghesso | 1 | 52 | 22.83 |
| S. Podda | 2 | 19 | 10.88 |
| M. Vanzi | 3 | 89 | 33.52 |