Name
Title | ||
|---|---|---|
Effective Mobility And Interface-State Density Of La2o3 Nmisfets After Post Deposition Annealing |
Abstract | ||
|---|---|---|
In this paper, we reported the effective mobility and the interface-state density of La2O3 nMISFETs fabricated under different post deposition annealing (PDA) conditions; annealing temperature (300 degrees C-600 degrees C) and ambient (N-2 or O-2). High effective mobility of 312 cm(2)/Vs and low interface-state density of 6x10(10) cm(-2)/eV were obtained from La2O3 nMISFET with equivalent oxide thickness (EOT) of 1.7 nm after PDA at 300 degrees C in N-2 ambient for 10 minutes. Gate leakage current density was 6.8x10(-6) A/cm(2). We found that peak effective mobility decreased with increasing anneal temperature, regardless of annealing ambient. We also observed a monotonous relationship between effective mobility and interface-state density. This behavior suggests that lowering the interface-state density is essential to obtain high mobility in the high-kappa/Si structure. |
Year | DOI | Venue |
|---|---|---|
2006 | 10.1587/elex.3.316 | IEICE ELECTRONICS EXPRESS |
Keywords | Field | DocType |
La2O3, PDA, nMISFET, mobility, interface-state density | Equivalent oxide thickness,Gate leakage current,Deposition (law),Computer science,Electronic engineering,Annealing (metallurgy) | Journal |
Volume | Issue | ISSN |
3 | 13 | 1349-2543 |
Citations | PageRank | References |
1 | 0.63 | 1 |
Authors | ||
7 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Jin-Aun Ng | 1 | 1 | 0.63 |
| Nobuyuki Sugii | 2 | 4 | 5.26 |
| Kuniyuki Kakushima | 3 | 9 | 11.63 |
| Parhat Ahmet | 4 | 3 | 4.13 |
| Kazuo Tsutsui | 5 | 6 | 9.26 |
| Takeo Hattori | 6 | 1 | 1.98 |
| Hiroshi Iwai | 7 | 12 | 12.99 |