Name
Abstract | ||
|---|---|---|
Abstract: This paper presents a new scheme for error control coding in multilevel Flash memories. The n bits stored in a single memory cell are organized in different "bit-layers", which are independent from one another. Error correction is carried out separately for each bit-layer. The correction of any failure in a single memory cell is therefore achieved by using a simple error control code (ECC) providing single-bit correction, regardless of the number of bits stored in a single cell. This greatly simplifies the encoding and decoding circuits and minimizes the impact of ECC time overhead on memory access time. Moreover the same encoding/decoding circuit and check cells are used with multilevel memories working at a variable number of bits per cell. |
Year | DOI | Venue |
|---|---|---|
2001 | 10.1109/MTDT.2001.945227 | MTDT |
Keywords | Field | DocType |
error correction,error control,single-bit correction,simple error control code,multilevel memory,multilevel flash memories,decoding circuit,single cell,error control code scheme,memory access time,single memory cell,multilevel flash memory,circuits,decoding,fabrication,encoding,nonvolatile memory,block codes,threshold voltage | Flash memory,Access time,Computer science,Block code,Parallel computing,Error detection and correction,Non-volatile memory,Decoding methods,Computer hardware,Encoding (memory),Memory cell | Conference |
ISSN | Citations | PageRank |
1087-4852 | 3 | 1.01 |
References | Authors | |
2 | 4 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Stefano Gregori | 1 | 62 | 24.34 |
| Guido Torelli | 2 | 240 | 64.39 |
| Osama Khouri | 3 | 41 | 14.44 |
| Rino Micheloni | 4 | 69 | 12.85 |