Title
Descrambling and data reading techniques for flash-EEPROM memories. Application to smart cards
Abstract
The retention, reliability and security of data stored in Non Volatile Memories (NVM) are problems of utmost importance for the microelectronics industry. All these issues could be addressed by physically reading the memory content. A method to deduce memory organization and then to read data in Flash-EEPROM devices is presented. It is based on failure analysis techniques such as Focused Ion Beam (FIB), Scanning Kelvin Probe Microscopy (SKPM) and Scanning Capacitance Microscopy (SCM). An application is demonstrated on the Flash memory of a Programmable Integrated Circuit (PIC) from Microchip dedicated to smart card applications.
Year
DOI
Venue
2006
10.1016/j.microrel.2006.07.022
Microelectronics Reliability
Keywords
Field
DocType
smart card,scanning capacitance microscopy,non volatile memory,integrated circuit,failure analysis,focused ion beam
EEPROM,Flash memory,Microelectronics,Scanning capacitance microscopy,Smart card,Electronic engineering,Non-volatile memory,Engineering,Memory organisation,Integrated circuit,Embedded system
Journal
Volume
Issue
ISSN
46
9
0026-2714
Citations 
PageRank 
References 
4
0.42
0
Authors
5
Name
Order
Citations
PageRank
C. De Nardi170.84
R. Desplats24015.34
P. Perdu36027.38
J.-L. Gauffier470.84
C. Guérin540.42