Name
Title | ||
|---|---|---|
Investigation of defects introduced by static and dynamic hot carrier stress on SOI partially depleted body-contact MOSFETs |
Abstract | ||
|---|---|---|
SOI partially depleted body-contact MOSFETs were subjected to static and dynamic hot carrier stress. Drain current was investigated by means of Deep Level Transient Spectroscopy and switch-ON transient analysis in a wide temperature range. Under static degradation regime, drain current behaviour was determined by the creation of two discrete traps most likely located in the drain vicinity; a hole trap cited in the literature and a defect of metastable nature. Under dynamic degradation regime, drain current behaviour was determined by body–Si/SiO2 interface-state generation. Experimental data and fitting results based on stretched exponential law are in accordance. |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1016/j.microrel.2009.07.024 | Microelectronics Reliability |
Field | DocType | Volume |
Silicon on insulator,Atmospheric temperature range,Deep-level transient spectroscopy,Electronic engineering,Degradation (geology),Metastability,Transient analysis,Engineering,MOSFET,Hot carrier stress | Journal | 49 |
Issue | ISSN | Citations |
9 | 0026-2714 | 1 |
PageRank | References | Authors |
0.39 | 1 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| M.A. Exarchos | 1 | 2 | 1.54 |
| G.J. Papaioannou | 2 | 14 | 8.35 |
| J. Jomaah | 3 | 6 | 3.32 |
| F. Balestra | 4 | 1 | 0.39 |