Name
Abstract | ||
|---|---|---|
In LDMOS devices for high-voltage applications, there appears a notable fingerprint of current-voltage characteristics known as soft breakdown. Its mechanism is analyzed and modeled on LDMOS devices where a high resistive drift region exists. This analysis has revealed that the softness of breakdown, known as the expansion effect, withholding a run-away of current, is contributed by the flux of holes underneath the gate-overlap region originated by impact-ionization. The mechanism of the expansion effect is modeled and implemented into the compact model HiSIM_HV for circuit simulation. A good agreement between simulated characteristics and 2D-device simulation results is verified. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1587/transele.E95.C.1817 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
high-voltage MOSFETs, breakdown, high-electric-field phenomena, compact model, surface potential | LDMOS,Electronic engineering,Engineering,Optoelectronics | Journal |
Volume | Issue | ISSN |
E95C | 11 | 1745-1353 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
9 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Takahiro Iizuka | 1 | 2 | 3.79 |
| Takashi Sakuda | 2 | 0 | 0.34 |
| Yasunori Oritsuki | 3 | 0 | 0.34 |
| Akihiro Tanaka | 4 | 0 | 0.68 |
| Masataka Miyake | 5 | 3 | 3.07 |
| Hideyuki Kikuchihara | 6 | 7 | 2.85 |
| Uwe Feldmann | 7 | 0 | 1.69 |
| Hans Jürgen Mattausch | 8 | 96 | 32.93 |
| Mitiko Miura-Mattausch | 9 | 11 | 16.18 |