Name
Title | ||
|---|---|---|
A 65 nm CMOS fully-integrated dynamic reconfigurable differential power amplifier with high gain in both bands |
Abstract | ||
|---|---|---|
A fully-integrated dual-band dynamic reconfigurable differential power amplifier with high gain in 65nm CMOS is presented. A switchable shunt LC network is proposed to implement the dual-band reconfigurable operation and achieve high gain at both low and high frequency bands, and the high quality on-chip transformers are utilized to implement input/output impedance matching and single-ended to differential conversion. Measured results show that the dual-band dynamic reconfigurable power amplifier can provide 23dB gain at 2.15GHz and 21dB gain at 4.70GHz, and achieve more than 19dBm saturated output power at 2.15GHz and 13dBm saturated output power at 4.70GHz, respectively. The die area is about 1.7mm×2.0mm. |
Year | DOI | Venue |
|---|---|---|
2011 | 10.1016/j.mejo.2011.04.004 | Microelectronics Journal |
Keywords | DocType | Volume |
Reconfigurable power amplifier,CMOS,RF,Transformer,Switchable LC tank | Journal | 42 |
Issue | ISSN | Citations |
6 | 0026-2692 | 0 |
PageRank | References | Authors |
0.34 | 0 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Baoyong Chi | 1 | 184 | 51.00 |
| Kasra Omid-Zohoor | 2 | 0 | 0.34 |
| Zhihua Wang | 3 | 775 | 190.44 |
| S. Simon Wong | 4 | 332 | 40.81 |