Title
Product code schemes for error correction in MLC NAND flash memories
Abstract
Error control coding (ECC) is essential for correcting soft errors in Flash memories. In this paper we propose use of product code based schemes to support higher error correction capability. Specifically, we propose product codes which use Reed-Solomon (RS) codes along rows and Hamming codes along columns and have reduced hardware overhead. Simulation results show that product codes can achieve better performance compared to both Bose-Chaudhuri-Hocquenghem codes and plain RS codes with less area and low latency. We also propose a flexible product code based ECC scheme that migrates to a stronger ECC scheme when the numbers of errors due to increased program/erase cycles increases. While these schemes have slightly larger latency and require additional parity bit storage, they provide an easy mechanism to increase the lifetime of the Flash memory devices.
Year
DOI
Venue
2012
10.1109/TVLSI.2011.2174389
IEEE Trans. VLSI Syst.
Keywords
Field
DocType
higher error correction capability,error control coding,bose-chaudhuri-hocquenghem code,flash memory device,flash memory,ecc scheme,stronger ecc scheme,mlc nand flash memory,product code scheme,product code,hamming code,flexible product code,hamming codes,bch codes
Forward error correction,Hamming code,Concatenated error correction code,Computer science,Low-density parity-check code,Parallel computing,Block code,Turbo code,Linear code,Tornado code,Computer hardware
Journal
Volume
Issue
ISSN
20
12
1063-8210
Citations 
PageRank 
References 
26
1.51
16
Authors
3
Name
Order
Citations
PageRank
Chengen Yang1565.47
Yunus Emre2605.60
Chaitali Chakrabarti31978184.17