Name
Title | ||
|---|---|---|
Failure analysis case study on a Cu/low-k technology in package: New front-side approach using laser and plasma de-processing |
Abstract | ||
|---|---|---|
Because of its advantages (reduction of thickness, improvement of the signal delay and of the thermal dissipation…), Cu/low-k technologies are more and more used for RF applications in semiconductor industry. The failure analysis of such devices becomes a new challenge. This paper deals with a failure analysis case study on copper and low-k dielectric structure encapsulated in a plastic package. It shows the limitations of the techniques used in a standard failure analysis flow and presents a new sample preparation combining laser package ablation and specific RIE process for front-side decapsulation. This innovative sample preparation flow has been found mandatory for solving the failure analysis case: it was demonstrated that there was not any defect at the surface of the die and this method enabled the access to an EOS defect located between two metal layers. |
Year | DOI | Venue |
|---|---|---|
2010 | 10.1016/j.microrel.2010.07.036 | Microelectronics Reliability |
Keywords | Field | DocType |
failure analysis,sample preparation,copper | Low-k dielectric,Dielectric,Electronic packaging,Sample preparation,Laser,Electronic engineering,Electronics,Reactive-ion etching,Engineering,Plasma | Journal |
Volume | Issue | ISSN |
50 | 9 | 0026-2714 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| A. Aubert | 1 | 1 | 0.71 |
| J.-P. Rebrassé | 2 | 0 | 0.68 |
| L. Dantas de Morais | 3 | 0 | 1.69 |
| N. Labat | 4 | 20 | 10.40 |
| H. Frémont | 5 | 9 | 4.04 |