Name
Abstract | ||
|---|---|---|
Innovative architectural and circuit techniques are reducing the dynamic power in ternary content addressable memories (TCAMs). Also, shrinking device dimensions are making transistors increasingly leaky. Due to these two trends, the static power is becoming a significant portion of the total TCAM power. This paper presents two novel ternary storage cells that exploit the unique properties of TCAMs for reducing the cell leakage. Simulation results of the proposed cells show up to 40% leakage reduction over the conventional TCAM cell at the expense of a small degradation ( |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1109/TVLSI.2008.2006040 | IEEE Trans. VLSI Syst. |
Keywords | Field | DocType |
low-leakage storage cell,static power,ternary content addressable memory,proposed cell,novel ternary storage cell,cell leakage,leakage reduction,dynamic power,circuit technique,total tcam power,conventional tcam cell,chip,content addressable memory,voltage,degradation,associative memory,leakage current,transistors,cmos technology,tcam,noise reduction,circuits | Leakage (electronics),Computer science,CMOS,Chip,Electronic engineering,Dynamic demand,Content-addressable storage,Transistor,Electronic circuit,Integrated circuit,Electrical engineering | Journal |
Volume | Issue | ISSN |
17 | 5 | 1063-8210 |
Citations | PageRank | References |
10 | 1.83 | 7 |
Authors | ||
2 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Nitin Mohan | 1 | 69 | 7.49 |
| Manoj Sachdev | 2 | 669 | 88.45 |