Name
Title | ||
|---|---|---|
Statistical estimation of leakage power dissipation in nano-scale complementary metal oxide semiconductor digital circuits using generalised extreme value distribution. |
Abstract | ||
|---|---|---|
In this study, the authors present an accurate approach for the estimation of statistical distribution of leakage power consumption in the presence of process variations in nano-scale complementary metal oxide semiconductor (CMOS) technologies. The technique, which is additive with respect to the individual gate leakage values, employs a generalised extreme value (GEV) distribution. Compared with ... |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1049/iet-cds.2011.0348 | IET Circuits, Devices & Systems |
Keywords | Field | DocType |
CMOS digital integrated circuits,Monte Carlo methods,statistical distributions | Digital electronics,Monte Carlo method,Leakage (electronics),Generalized extreme value distribution,Extreme value theory,Electronic engineering,CMOS,Log-normal distribution,Electronic circuit,Mathematics | Journal |
Volume | Issue | ISSN |
6 | 5 | 1751-858X |
Citations | PageRank | References |
2 | 0.43 | 3 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hossein Aghababa | 1 | 17 | 5.08 |
| Alireza Khosropour | 2 | 6 | 1.33 |
| Ali Afzali-kusha | 3 | 365 | 54.65 |
| Behjat Forouzandeh | 4 | 21 | 8.48 |
| Massoud Pedram | 5 | 7801 | 1211.32 |