Name
Abstract | ||
|---|---|---|
The temperature dependence of the IC(VBE) relationshipcan be characterised by two parameters: EG and XTI. Theclassical method to extract these parameters consists in a"best fitting" from measured VBE(T) values, using leastsquare algorithm at constant collector current. Thismethod involves an accurate measurement of VBE voltageand an accurate value of the operating temperature. Wepropose in this paper, a configurable test structurededicated to the extraction of temperature dependence ofIC(VBE) characteristic for BJT designed with bipolar orBiCMOS processes. This allows a direct measurement ofdie temperature and consequently an accuratemeasurement of VBE(T). First, the classical extractionmethod is explained. Then, the implementation techniquesof the new method are discussed, the improvement of thedesign is presented. |
Year | DOI | Venue |
|---|---|---|
2002 | 10.1109/DATE.2002.998291 | DATE |
Keywords | Field | DocType |
low voltage applications,parameter determination,accurate measurement,theclassical method,best fitting,temperature dependence,new method,operating temperature,accurate value,vbe voltageand,test structure,temperature dependence ofic,direct measurement ofdie temperature,drams,design methodology,photonic band gap,stability,telephony,low power electronics,low voltage | Dram,Operating temperature,BiCMOS,Analytical chemistry,Computer science,Parallel computing,Voltage,Electronic engineering,Bipolar junction transistor,Low voltage,Test structure,Low-power electronics | Conference |
ISBN | Citations | PageRank |
0-7695-1471-5 | 0 | 0.34 |
References | Authors | |
2 | 6 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| W. Rahajandraibe | 1 | 14 | 10.25 |
| Dufaza, C. | 2 | 37 | 5.35 |
| Daniel Auvergne | 3 | 145 | 31.67 |
| B. Cialdella | 4 | 0 | 0.34 |
| B. Majoux | 5 | 0 | 0.34 |
| V. Chowdhury | 6 | 0 | 0.34 |