Paper Info
Title
Semi-analytical model for schottky-barrier carbon nanotube and graphene nanoribbon transistors
Abstract
This paper describes a physics-based semi-analytical model for Schottky-barrier carbon nanotube (CNT) and graphene nanoribbon (GNR) transistors. The model includes the treatment of (i) both tunneling and thermionic currents, (ii) ambipolar conduction, i.e., both electron and hole current components, (iii) ballistic transport, and (iv) multi-band propagation. Further, it reduces the computational complexity in the two critical and time-consuming steps, namely the calculation of the tunneling probability and the self-consistent evaluation of the the surface potential in the channel. When validated against NanoTCAD ViDES, a quantum transport simulation framework based on the non-equilibrium Green's function method, it is several orders of magnitude faster without significant loss in accuracy. Since the model is physics-based, it is parameterizable and can be used to study the effect of common parametric variations in CNT diameter and GNR width, Schottky-barrier height, and insulator thickness.
Year
DOI
Venue
2010
10.1145/1785481.1785538
ACM Great Lakes Symposium on VLSI
Keywords
Field
DocType
schottky-barrier height,ballistic transport,semi-analytical model,ambipolar conduction,physics-based semi-analytical model,schottky-barrier carbon nanotube,cnt diameter,quantum transport simulation framework,gnr width,graphene nanoribbon transistor,nanotcad vides,tunneling probability,computational complexity,carbon nanotube,schottky barrier,carbon nanotubes,graphene nanoribbons
Quantum tunnelling,Schottky barrier,Ambipolar diffusion,Thermionic emission,Graphene,Computer science,Electronic engineering,Graphene nanoribbons,Carbon nanotube,Ballistic conduction
Conference
Citations 
PageRank 
References 
4
1.29
5
Authors
4
Name
Order
Citations
PageRank
Xuebei Yang1384.89
Gianluca Fiori2164.54
Giuseppe Iannaccone315224.49
Kartik Mohanram469465.14