Name
Title | ||
|---|---|---|
Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures |
Abstract | ||
|---|---|---|
The surface band bending in undoped, Si-doped and Mg-doped GaN layers with Ga-face polarity as well as AlGaN/GaN heterostructures with Ga(Al)-face polarity has been investigated by room temperature contactless electroreflectance (CER) spectroscopy. The opposite phase of CER resonance (i.e., opposite band bendings) has been observed for n-type (undoped and Si-doped) and p-type (Mg-doped) GaN layers. It means that for thick GaN layers the surface band bending results not from crystal polarity but from the Fermi-level pinning at the surface and carrier type/concentration inside the layer. The crystal polarity can influence the surface band bending for thin (Al)GaN layers for which the screening phenomena can be neglected or are very weak. Such a situation is typical of AlGaN/GaN transistor structures where the thickness of AlGaN layer is below 40nm. In this case, the strong internal electric field in AlGaN layer is manifested in CER spectra by a resonance with a long period Franz-Keldysh oscillation. |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1016/j.mejo.2008.07.028 | Microelectronics Journal |
Keywords | Field | DocType |
gan,gan transistor structure,band bending,contactless electroreflectance,gan heterostructures,ga-face polarity,surface band,algan layer,gan transistor heterostructures,crystal polarity,thick gan layer,fermi level,gan layer,mg-doped gan layer,contactless electroreflectance study,face polarity,room temperature,oscillations,electric field | Extrinsic semiconductor,Franz–Keldysh effect,Doping,Electronic engineering,Band bending,Thin film,Engineering,Heterojunction,Semiconductor,Condensed matter physics,Fermi level | Journal |
Volume | Issue | ISSN |
40 | 2 | Microelectronics Journal |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| R. Kudrawiec | 1 | 1 | 2.85 |
| M. Motyka | 2 | 0 | 1.01 |
| J. Misiewicz | 3 | 1 | 2.85 |
| B. Paszkiewicz | 4 | 0 | 1.01 |
| R. Paszkiewicz | 5 | 0 | 0.68 |
| M. Tlaczala | 6 | 0 | 1.69 |