Name
Title | ||
|---|---|---|
Standard Bicmos Implementation Of A Two-Peak Negative Differential Resistance Circuit With High And Adjustable Peak-To-Valley Current Ratio |
Abstract | ||
|---|---|---|
The paper demonstrates a novel two-peak negative differential resistance (NDR) circuit combining Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT). Compared to the resonant-tunneling diode, MOS-HBT-NDR has two major advantages in our circuit design. One is that the fabrication of this MOS-HBT-NDR-based application can be fully implemented by the standard BiCMOS process. Another is that the peak current can be effectively adjusted by the controlled voltage. The peak-to-valley current ratio is about 4136 and 9.4 at the first and second peak respectively. It is very useful for circuit designers to consider the NDR-based applications. |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1587/transele.E92.C.635 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | DocType | Volume |
negative differential resistance (NDR), MOS, HBT, BiCMOS | Journal | E92C |
Issue | ISSN | Citations |
5 | 1745-1353 | 1 |
PageRank | References | Authors |
0.41 | 3 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Dong-shong Liang | 1 | 8 | 4.74 |
| Kwang-jow Gan | 2 | 10 | 5.16 |
| Cheng-Chi Tai | 3 | 8 | 5.43 |
| Cher-Shiung Tsai | 4 | 9 | 3.75 |