Name
Abstract | ||
|---|---|---|
A metal oxide semiconductor field effect transistor (MOSFET) with ultra-thin La2O3/Y2O3 high-k gate dielectric was fabricated. The effects of thermal treatment process on both physical and electrical characteristics of the La2O3/Y2O3 stack were studied using XPS and electrical measurements. It was observed that the effective mobility of the fabricated MOSFETs with La2O3/Y2O3 gate stack was not degraded with increasing the annealing temperatures up to 600°C. X-ray photoelectron spectroscopy (XPS) analysis also revealed that the formation of SiO2 and silicate layer at the interface was suppressed in La2O3/Y2O3 stack compare to that of in La2O3 single layer. Obtained results suggesting that La2O3/Y2O3 gate stack is one of the promising candidates for high-k gate insulator to be used in the future metal oxide field effect transistors. |
Year | DOI | Venue |
|---|---|---|
2008 | 10.1016/j.microrel.2008.09.004 | Microelectronics Reliability |
DocType | Volume | Issue |
Journal | 48 | 11 |
ISSN | Citations | PageRank |
0026-2714 | 0 | 0.34 |
References | Authors | |
0 | 8 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Parhat Ahmet | 1 | 3 | 4.13 |
| Kentaro Nakagawa | 2 | 0 | 0.34 |
| Kuniyuki Kakushima | 3 | 9 | 11.63 |
| Hiroshi Nohira | 4 | 0 | 0.34 |
| Kazuo Tsutsui | 5 | 6 | 9.26 |
| Nobuyuki Sugii | 6 | 4 | 5.26 |
| Takeo Hattori | 7 | 1 | 1.98 |
| Hiroshi Iwai | 8 | 12 | 12.99 |