Name
Title | ||
|---|---|---|
Novel Tunneling Field-Effect Transistor With Sigma-Shape Embedded Sige Sources And Recessed Channel |
Abstract | ||
|---|---|---|
A novel tunneling field-effect transistor (TFET) featuring the sigma-shape embedded SiGe sources and recessed channel is proposed. The gate facing the source effectively focuses the E-field at the tip of the source and eliminates the gradual turn-on issue of planar TFETs. The fabrication scheme modified from the state-of-the-art 45 nm/32 nm CMOS technology flows provides a unique benefit in the co-integrability and the control of I-D-V-GS characteristics. The feasibility is verified with TCAD process simulation of the device with 14nm of the gate dimension. The device simulation shows 5-order change in the drain current with a gate bias change less than 300 mV. |
Year | DOI | Venue |
|---|---|---|
2013 | 10.1587/transele.E96.C.639 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
TFET, compatibility to CMOS technology flow, sigma-shape embedded SiGe source, recessed channel | Communication channel,Electronic engineering,Tunneling field effect transistor,Sigma,Engineering | Journal |
Volume | Issue | ISSN |
E96C | 5 | 1745-1353 |
Citations | PageRank | References |
0 | 0.34 | 3 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Min-Chul Sun | 1 | 0 | 1.69 |
| Sang Wan Kim | 2 | 0 | 2.37 |
| Garam Kim | 3 | 0 | 1.35 |
| Hyun Woo Kim | 4 | 63 | 12.99 |
| Hyungjin Kim | 5 | 221 | 14.63 |
| Byung-Gook Park | 6 | 7 | 14.38 |