Name
Title | ||
|---|---|---|
A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design |
Abstract | ||
|---|---|---|
Fully scalable, analytical HF noise parameter equations for bipolar transistors are presented and experimentally tested on high-speed Si and SiGe technologies. A technique for extracting the complete set of transistor noise parameters from Y parameter measurements only is developed and verified. Finally, the noise equations are coupled with scalable variants of the HICUM and SPICE-Gummel-Poon mode... |
Year | DOI | Venue |
|---|---|---|
1997 | 10.1109/4.628757 | IEEE Journal of Solid-State Circuits |
Keywords | DocType | Volume |
Bipolar transistors,Semiconductor device noise,Circuit noise,Equations,Noise figure,Noise measurement,Low-noise amplifiers,Integrated circuit noise,Background noise,Silicon germanium | Journal | 32 |
Issue | ISSN | Citations |
9 | 0018-9200 | 18 |
PageRank | References | Authors |
6.22 | 4 | 8 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Sorin P. Voinigescu | 1 | 221 | 53.57 |
| Michael C. Maliepaard | 2 | 23 | 7.85 |
| Jonathan L. Showell | 3 | 18 | 6.22 |
| Greg E. Babcock | 4 | 18 | 6.22 |
| David Marchesan | 5 | 18 | 6.22 |
| Michael Schroter | 6 | 32 | 11.72 |
| Peter Schvan | 7 | 147 | 37.29 |
| David L. Harame | 8 | 27 | 10.01 |