Name
Title | ||
|---|---|---|
Detailed investigation of the effects of La and Al content on the electrical characteristics and reliability properties of La–Al–O gate dielectrics |
Abstract | ||
|---|---|---|
The effects of the composition of La–Al–O gate dielectrics on metal–oxide–semiconductor field-effect transistor (MOSFET) characteristics and reliability properties were investigated in detail. It was found that the interface trap density (Dit) was greater for [Al]-enriched La–Al–O than for [La]-enriched La–Al–O. As a result, the drive current and the time-to-breakdown (Tbd) for the gate oxide were lower for [Al]-enriched La–Al–O than for [La]-enriched La–Al–O. It is thought that the large tensile strain at the interface with the Si substrate is responsible for the smaller Dit in the case of [La]-enriched La–Al–O. |
Year | DOI | Venue |
|---|---|---|
2010 | 10.1016/j.microrel.2010.06.009 | Microelectronics Reliability |
Field | DocType | Volume |
Substrate (chemistry),Density of states,Dielectric,Trap density,Electronic engineering,Tensile strain,Gate oxide,Engineering,Transistor,MOSFET | Conference | 50 |
Issue | ISSN | Citations |
12 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 0 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Masamichi Suzuki | 1 | 1 | 1.02 |
| Masato Koyama | 2 | 2 | 1.51 |
| Atsuhiro Kinoshita | 3 | 0 | 1.01 |