Title
A Standard-Cell Based On-Chip Nmos And Pmos Performance Monitor For Process Variability Compensation
Abstract
A completely-digital, on-chip performance monitor is newly proposed in this paper. In addition to a traditional ring oscillator, the proposed monitor has a special buffer chain whose output duty ratio is emphasized by the difference between NMOS and PMOS performances. Thus the performances of NMOS and PMOS transistor can accurately be estimated independently. By using only standard cells, the monitor achieves a small occupied area and process portability. To demonstrate the accuracy of performance estimation and the usability of the monitor, we have fabricated the proposed monitor using 90 nm CMOS process. The estimated errors of the drain saturation current of NMOS and PMOS transistors are 2.0% and 3.4%, respectively. A D/A converter has been also fabricated to verify the usability of the proposed monitor. The output amplitude variation of the D/A converter is successfully reduced to 50.0% by the calibration using the proposed monitor.
Year
DOI
Venue
2013
10.1587/transele.E96.C.894
IEICE TRANSACTIONS ON ELECTRONICS
Keywords
Field
DocType
on chip, monitor, digital, process variability, standard cell, area efficiency
NMOS logic,Electronic engineering,Standard cell,Engineering,Process variability,PMOS logic
Journal
Volume
Issue
ISSN
E96C
6
1745-1353
Citations 
PageRank 
References 
0
0.34
5
Authors
5
Name
Order
Citations
PageRank
Toshiyuki Yamagishi1112.99
Tatsuo Shiozawa200.68
Koji Horisaki3101.26
Hiroyuki Hara400.34
Yasuo Unekawa5325.89