Name
Abstract | ||
|---|---|---|
In VLSI development process simulation is needed to understand the interaction between
successive process steps and to give input data for device simulation. The goal of
this paper is to sketch the present state of process simulation and to give the reader
a feeling of the difficulties but also of what can be gained by using such tools.
Due to their importance, most attention will be given to the simulation of ion implantation,
diffusion, and oxidation.
|
Year | DOI | Venue |
|---|---|---|
1990 | 10.1002/ett.4460010310 | EUROPEAN TRANSACTIONS ON TELECOMMUNICATIONS |
Field | DocType | Volume |
Computer simulation,Computer science,Electronic engineering,Process simulation,Very-large-scale integration,Semiconductor,Sketch,Ion implantation | Journal | 1 |
Issue | ISSN | Citations |
3 | 1120-3862 | 0 |
PageRank | References | Authors |
0.34 | 2 | 2 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Peter Pichler | 1 | 0 | 0.68 |
| Heiner Ryssel | 2 | 5 | 2.16 |