Title
A 1.95 GHz Sub-1 dB NF, +40 dBm OIP3 WCDMA LNA Module.
Abstract
A silicon integrated LNA for WCDMA cellular infrastructure applications, e.g., base stations will be demonstrated. The LNA is designed for WCDMA band II, i.e., 1.92-1.98 GHz, and reaches a 0.9 dB NF at 27°C and 1.2 dB at 65°C. A 0.1 dB NF improvement is obtained when the first gain stage is implemented using a cascode topology rather than a two-stage topology. The output IP3 is +40 dBm (+38 dBm) a...
Year
DOI
Venue
2012
10.1109/JSSC.2012.2191673
IEEE Journal of Solid-State Circuits
Keywords
Field
DocType
Noise measurement,Gain,Noise,Radio frequency,Linearity,Electrostatic discharges,Attenuators
Low-noise amplifier,BiCMOS,Return loss,Attenuator (electronics),Cascode,Computer science,Electronic engineering,Gain stage,Monolithic microwave integrated circuit,dBm,Electrical engineering
Journal
Volume
Issue
ISSN
47
7
0018-9200
Citations 
PageRank 
References 
0
0.34
4
Authors
6