Abstract | ||
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A silicon integrated LNA for WCDMA cellular infrastructure applications, e.g., base stations will be demonstrated. The LNA is designed for WCDMA band II, i.e., 1.92-1.98 GHz, and reaches a 0.9 dB NF at 27°C and 1.2 dB at 65°C. A 0.1 dB NF improvement is obtained when the first gain stage is implemented using a cascode topology rather than a two-stage topology. The output IP3 is +40 dBm (+38 dBm) a... |
Year | DOI | Venue |
---|---|---|
2012 | 10.1109/JSSC.2012.2191673 | IEEE Journal of Solid-State Circuits |
Keywords | Field | DocType |
Noise measurement,Gain,Noise,Radio frequency,Linearity,Electrostatic discharges,Attenuators | Low-noise amplifier,BiCMOS,Return loss,Attenuator (electronics),Cascode,Computer science,Electronic engineering,Gain stage,Monolithic microwave integrated circuit,dBm,Electrical engineering | Journal |
Volume | Issue | ISSN |
47 | 7 | 0018-9200 |
Citations | PageRank | References |
0 | 0.34 | 4 |
Authors | ||
6 |
Name | Order | Citations | PageRank |
---|---|---|---|
Jos Bergervoet | 1 | 37 | 8.29 |
Domine M. W. Leenaerts | 2 | 221 | 47.32 |
Gerben W. de Jong | 3 | 10 | 2.98 |
Edwin van der Heijden | 4 | 30 | 3.62 |
Jan-Willem Lobeek | 5 | 1 | 0.75 |
Alexander Simin | 6 | 1 | 0.75 |