Paper Info
Title
A dual-mode NAND flash memory: 1-Gb multilevel and high-performance 512-Mb single-level modes
Abstract
A 116.7-mm/sup 2/ NAND flash memory having two modes, 1-Gb multilevel program cell (MLC) and high-performance 512-Mb single-level program cell (SLC) modes, is fabricated with a 0.15-/spl mu/m CMOS technology. Utilizing simultaneous operation of four independent banks, the device achieves 1.6 and 6.9 MB/s program throughputs for MLC and SLC modes, respectively. The two-step bitline setup scheme sup...
Year
DOI
Venue
2001
10.1109/4.962291
IEEE Journal of Solid-State Circuits
Keywords
DocType
Volume
Throughput,Costs,Random access memory,Flash memory,CMOS technology,Voltage control,Threshold voltage,Nonvolatile memory,Coupling circuits,Digital cameras
Journal
36
Issue
ISSN
Citations 
11
0018-9200
21
PageRank 
References 
Authors
5.06
0
12
Name
Order
Citations
PageRank
Taehee Cho1237.06
Yeong-Taek Lee211912.70
Euncheol Kim3235.84
Jin-Wook Lee4297.14
Sunmi Choi5215.74
Seung-Jae Lee622740.12
Donghwan Kim79417.85
Wook-Ghee Hahn8418.19
Young-Ho Lim98117.55
Jae-Duk Lee10246.30
Jungdal Choi11286.74
Kang-Deog Suh125622.19