Title
Design-Oriented Substrate Noise Coupling Macromodels For Heavily Doped Cmos Processes
Abstract
Macromodels for substrate noise coupling in heavily doped substrates have been developed. These models are simple and express the substrate coupling directly as a function of the spacing between the injection and sensing contacts. The models require only six parameters that can be readily extracted from a few device simulations and measurements. The model is validated for a 2 mu m and a 0.5 mu m CMOS process where it is shown that the simple model predicts the noise coupling accurately.
Year
DOI
Venue
1999
10.1109/ISCAS.1999.780134
ISCAS '99: PROCEEDINGS OF THE 1999 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL 6: CIRCUITS ANALYSIS, DESIGN METHODS, AND APPLICATIONS
Keywords
Field
DocType
curve fitting,cmos integrated circuits,semiconductor device modeling,computer science,ic design,integrated circuit design,frequency,predictive models,impedance
Substrate (chemistry),Coupling,Computer science,Doping,Circuit design,Substrate coupling,CMOS,Electronic engineering,Integrated circuit design,Integrated circuit
Conference
Citations 
PageRank 
References 
2
0.46
4
Authors
3
Name
Order
Citations
PageRank
Anil Samavedam140.90
Kartikeya Mayaram234958.50
Terri S. Fiez316747.25