Title
Towards terahertz operation of CMOS
Abstract
This paper reports a new polysilicon gate separated Schottky barrier diode structure (PGS SBD) which enables operation of receivers at frequencies higher than that limited by the transistors; examples of the building blocks with on-chip antennas operating at 100 to 400 GHz, which suggest the use of CMOS in THz applications; and a potential path to realize 1 THz operation in CMOS.
Year
DOI
Venue
2009
10.1109/ISSCC.2009.4977378
ISSCC
Keywords
Field
DocType
on-chip antenna,cmos integrated circuits,polysilicon gate separated schottky barrier diode,terahertz wave devices,frequency 100 ghz to 400 ghz,terahertz operation,schottky diodes,pgs sbd,submillimetre wave antennas,frequency 1 thz,cmos,schottky barrier,metals,frequency modulation,detectors,terahertz,chip
Electromagnetic spectrum,Chemical species,Terahertz gap,Computer science,Electronic engineering,CMOS,Terahertz radiation,Schottky diode,Frequency modulation,Optoelectronics,Detector,Electrical engineering
Conference
ISBN
Citations 
PageRank 
978-1-4244-3458-9
3
0.60
References 
Authors
0
11
Name
Order
Citations
PageRank
Swaminathan Sankaran1327.79
Chuying Mao2204.35
Eunyoung Seok35810.30
Dongha Shim4277.01
C. Cao59214.45
Ruonan Han615227.20
Daniel J. Arenas7143.36
David B. Tanner8132.84
Stephen Hill930.60
Chih-Ming Hung1050975.38
Kenneth K. O1124942.87