Name
Abstract | ||
|---|---|---|
The development of next 32 nm generation and below needs innovations on not only device structures, but also fabrication techniques and material selections. Among those promising technologies, new gate structures as high-k gate dielectric and metal gate, strain channel carrier mobility enhancement technology, and novel non-planar MOSFET structures are all possible candidate technologies. In this paper, we will specify our discussion on the research progress of high-k-metal gate and non-planar MOSFET-technologies that are suitable to 32 nm technology node and beyond. |
Year | DOI | Venue |
|---|---|---|
2008 | 10.1007/s11432-008-0071-8 | SCIENCE IN CHINA SERIES F-INFORMATION SCIENCES |
Keywords | Field | DocType |
CMOS technology,high-k,metal gate,non-planar MOSFET,quasi-ballistic transport | Control theory,Communication channel,CMOS,Gate dielectric,High-κ dielectric,MOSFET,Optoelectronics,Metal gate,Electron mobility,Fabrication,Mathematics | Journal |
Volume | Issue | ISSN |
51 | 6 | 1009-2757 |
Citations | PageRank | References |
1 | 0.50 | 0 |
Authors | ||
8 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yangyuan Wang | 1 | 142 | 23.85 |
| Yangyuan Wang | 2 | 142 | 23.85 |
| zhang | 3 | 10 | 9.77 |
| zhang | 4 | 10 | 9.77 |
| Xiao-Yan Liu | 5 | 22 | 11.04 |
| Xiao-Yan Liu | 6 | 22 | 11.04 |
| Ru Huang | 7 | 188 | 48.74 |
| Ru Huang | 8 | 188 | 48.74 |