Abstract | ||
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High density, low leakage and non-volatility are the attractive features of Spin-Transfer-Torque-RAM (STT-RAM), which has made it a strong competitor against SRAM as a universal memory replacement in multi-core systems. However, STT-RAM suffers from high write latency and energy which has impeded its widespread adoption. To this end, we look at trading-off STT-RAM's non-volatility property (data-retention-time) to overcome these problems. We formulate the relationship between retention-time and write-latency, and find optimal retention-time for architecting an efficient cache hierarchy using STT-RAM. Our results show that, compared to SRAM-based design, our proposal can improve performance and energy consumption by 18% and 60%, respectively.
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Year | DOI | Venue |
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2012 | 10.1145/2228360.2228406 | DAC |
Keywords | Field | DocType |
cmp,stt-ram,enhanced performance,spin-transfer-torque-ram,data-retention-time,cache revive,cache storage,sram chips,heterogeneous (hybrid) systems,volatile stt-ram cache,volatile stt-ram caches,nonvolatility property,sram,write-latency,energy consumption,optimal retention-time,multicore system,universal memory replacement,switches,current density,stt ram,radiation detectors,system on a chip,hybrid system,retention time | System on a chip,Cache,Computer science,Latency (engineering),High density,Static random-access memory,Universal memory,Real-time computing,Low leakage,Energy consumption | Conference |
ISSN | ISBN | Citations |
0738-100X | 978-1-4503-1199-1 | 120 |
PageRank | References | Authors |
3.38 | 16 | 7 |
Name | Order | Citations | PageRank |
---|---|---|---|
Adwait Jog | 1 | 568 | 23.32 |
Asit K. Mishra | 2 | 1216 | 46.21 |
Cong Xu | 3 | 1154 | 48.25 |
Yuan Xie | 4 | 6430 | 407.00 |
Narayanan Vijaykrishnan | 5 | 6955 | 524.60 |
Ravishankar K. Iyer | 6 | 3489 | 504.32 |
Chita R. Das | 7 | 1046 | 45.21 |