Name
Abstract | ||
|---|---|---|
The MOS-HBT-NDR device is made of metal-oxide-semiconductor field-effect-transistor (MOS) and heterojunction bipolar transistor (HBT) devices, but it can show the negative-differential-resistance (NDR) current-voltage characteristic by suitably arranging the MOS parameters. The authors demonstrate a five-valued logic circuit using the two-peak MOS-HBT-NDR circuit as the driver and another two-peak MOS-HBT-NDR circuit as the load. The design and simulation is based on the technique of the standard 0.35mum SiGe process |
Year | DOI | Venue |
|---|---|---|
2006 | 10.1109/APCCAS.2006.342501 | APCCAS |
Keywords | Field | DocType |
0.35 micron,bicmos logic circuits,sige,negative-differential-resistance,heterojunction bipolar transistors,mos-hbt-ndr circuit,logic design,metal-oxide-semiconductor field-effect-transistor,heterojunction bipolar transistor devices,five-state logic circuit,bicmos process,ge-si alloys,mosfet,heterojunction bipolar transistor | Logic synthesis,Logic gate,State logic,Computer science,Circuit design,Electronic engineering,Bicmos logic circuits,Bicmos process,Heterojunction bipolar transistor,MOSFET,Electrical engineering | Conference |
ISBN | Citations | PageRank |
1-4244-0387-1 | 1 | 0.40 |
References | Authors | |
1 | 5 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Kwang-jow Gan | 1 | 10 | 5.16 |
| Dong-shong Liang | 2 | 8 | 4.74 |
| Cher-Shiung Tsai | 3 | 9 | 3.75 |
| Yaw-Hwang Chen | 4 | 6 | 2.92 |
| Chun-Ming Wen | 5 | 36 | 3.61 |