Name
Abstract | ||
|---|---|---|
Challenges for modeling and simulating active and passive 130-nm CMOS devices at mm-wave frequencies (>30 GHz) are discussed. Small-signal lumped circuits with appropriate parasitic elements are used to model the active transistor devices with excellent broadband accuracy. Passive element transmission lines are discussed as generic scalable reactive elements suitable for forming resonant circuits with intrinsic transistor capacitance. The trade-offs between physical and electrical circuit models for the transmission lines are presented. Our approach demonstrates that relatively simple models can be used to accurately predict the small-signal performance of CMOS active and passive devices from dc up to mm-wave frequencies. |
Year | DOI | Venue |
|---|---|---|
2004 | 10.1109/ISCAS.2004.1329704 | 2004 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL 5, PROCEEDINGS |
Keywords | Field | DocType |
millimeter wave,transmission line,electrical circuit,nanoelectronics,modeling and simulation,transistors,cmos integrated circuits,semiconductor device modeling | Nanoelectronics,Electrical network,Capacitance,Computer science,Modeling and simulation,Semiconductor device modeling,Electronic engineering,CMOS,Electronic circuit,Transistor | Conference |
Citations | PageRank | References |
3 | 0.51 | 1 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Chinh H. Doan | 1 | 95 | 16.94 |
| Sohrab Emami | 2 | 95 | 16.94 |
| Ali M. Niknejad | 3 | 942 | 148.48 |
| Robert W. Brodersen | 4 | 1857 | 401.31 |