Name
Abstract | ||
|---|---|---|
The monolithic integration of III-V nanowires on silicon by direct epitaxial growth enables new possibilities for the design and fabrication of electronic as well as optoelectronic devices. We demonstrate a new growth technique to directly integrate III--V semiconducting nanowires on silicon using selective area epitaxy within a nanotube template. Thus we achieve small diameter nanowires, controlled doping profiles and sharp heterojunctions essential for future device applications. We experimentally demonstrate vertical tunnel diodes and gate-all-around tunnel FETs based on InAs--Si nanowire heterojunctions. The results indicate the benefits of the InAs--Si material system combining the possibility of achieving high Ion with high Ion/Ioff ratio. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.7873/DATE.2014.247 | DATE |
Keywords | Field | DocType |
si material system,si nanowire heterojunctions,new growth technique,high ion,direct epitaxial growth,iii-v semiconductor nanowires,new possibility,small diameter nanowires,iii-v nanowires,gate-all-around tunnel,v semiconducting nanowires,future device,field effect transistors,si,silicon,doping,optoelectronic devices,heterojunctions,nanowires,epitaxial growth | Computer science,Field-effect transistor,Diode,Doping,Parallel computing,Electronic engineering,Heterojunction,Optoelectronics,Nanowire,Semiconductor,Silicon,Selective area epitaxy | Conference |
ISSN | Citations | PageRank |
1530-1591 | 0 | 0.34 |
References | Authors | |
0 | 9 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Schmid, H. | 1 | 4 | 5.85 |
| B. M. Borg | 2 | 0 | 0.34 |
| Moselund, K. | 3 | 0 | 0.68 |
| Pratyush Das Kanungo | 4 | 1 | 1.04 |
| G. Signorello | 5 | 0 | 0.34 |
| S. Karg | 6 | 0 | 0.34 |
| P. Mensch | 7 | 0 | 0.34 |
| V. Schmidt | 8 | 0 | 0.34 |
| H. Riel | 9 | 2 | 4.33 |