Title
On Cell Layout-Performance Relationships in VeSFET-Based, High-Density Regular Circuits
Abstract
In this paper, we study circuits implemented using high-density arrays composed of vertical slit field effect transistors. This layout style could dramatically increase transistor density and, therefore, reduce fabrication cost. However, its geometrical restrictions, imposed by the super-regular transistor arrangement and strictly parallel metal tracks, pose new design challenges. Our experiments reveal that very dense cell-level interconnect pattern may be responsible for unnecessary 15% increase of the circuit level, critical path delays. We demonstrate that these extra delays can be avoided by constructing appropriate cell interconnect layouts and by more flexible usage of available metal layers for intra-cell routing. To balance the performance and metal layer usage, we propose a linear programming-based technique for critical net re-routing.
Year
DOI
Venue
2011
10.1109/TCAD.2010.2097191
IEEE Trans. on CAD of Integrated Circuits and Systems
Keywords
DocType
Volume
circuit level,super-regular transistor arrangement,metal layer usage,flexible usage,dense cell-level,critical path delay,High-Density Regular Circuits,appropriate cell,Cell Layout-Performance Relationships,transistor density,parallel metal track,available metal layer
Journal
30
Issue
ISSN
Citations 
2
0278-0070
6
PageRank 
References 
Authors
0.59
9
3
Name
Order
Citations
PageRank
Yi-wei Lin1525.22
Marek-Sadowska, M.239838.60
Wojciech Maly31976352.57