Name
Abstract | ||
|---|---|---|
We tested a commercial 1Gbit 90nm NAND memory under exposure to a constant flux of heavy ions, aiming to study its behaviour in the space environment. We identified and classified different types of errors under various operating conditions. We observed single bit upsets both in the floating gate array and in the page buffer, alongside with functional interruptions during program and, to a lesser extent, erase operations. Our results provide some insight on possible issues which may arise also at sea-level with future (and more sensitive) Flash generations. |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1109/IOLTS.2007.59 | IOLTS |
Keywords | Field | DocType |
possible issue,single event effects,constant flux,nand flash memories,classified different type,functional interruption,floating gate array,nand memory,lesser extent,flash generation,page buffer,heavy ion,neutrons,ionizing radiation,operant conditioning,nonvolatile memory,sea level,testing,logic gates,dsl | Gigabit,Logic gate,Space environment,Computer science,Digital subscriber line,Electronic engineering,Real-time computing,NAND gate,Gate array,Non-volatile memory,Page buffers | Conference |
ISSN | ISBN | Citations |
1942-9398 | 0-7695-2918-6 | 2 |
PageRank | References | Authors |
0.42 | 0 | 7 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| M. Bagatin | 1 | 13 | 2.21 |
| G. Cellere | 2 | 4 | 2.42 |
| S. Gerardin | 3 | 31 | 6.60 |
| A. Paccagnella | 4 | 61 | 10.38 |
| A. Visconti | 5 | 3 | 2.06 |
| S. Beltrami | 6 | 2 | 0.76 |
| M. Maccarrone | 7 | 2 | 0.42 |