Name
Abstract | ||
|---|---|---|
Capacitive RF MEMS switches suffer from reliability issues, originating from mechanical fatigue or dielectric charging. In this work we focus on the charging effect of capacitive RF switches, fabricated on glass substrate with Si3N4 as a dielectric. The drift of the actuation parameters, namely the pull-in/pull-out voltages, are monitored and compared with two failure criteria, in order to estimate the time to failure (TTF). It is shown that the characteristics of the bias signal can significantly influence the switch's reliability. It is clearly demonstrated that increased actuation bias signal amplitude and duty cycle, can accelerate the switch degradation. Another environmental parameter found to influence the TTF is temperature. An improved predictive model is proposed in order to take into account all these effects. (C) 2010 Elsevier Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2010 | 10.1016/j.microrel.2010.07.064 | MICROELECTRONICS RELIABILITY |
Keywords | Field | DocType |
prediction model,life expectancy,duty cycle | Microelectromechanical systems,Duty cycle,Dielectric,Voltage,Capacitive sensing,Degradation (geology),Electronic engineering,Engineering,Amplitude,Electrical engineering,Silicon nitride | Journal |
Volume | Issue | ISSN |
50 | SP9-11 | 0026-2714 |
Citations | PageRank | References |
4 | 0.49 | 1 |
Authors | ||
8 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Mohamed Matmat | 1 | 8 | 1.35 |
| K. Koukos | 2 | 4 | 0.49 |
| F. Coccetti | 3 | 40 | 11.42 |
| T. Idda | 4 | 8 | 1.48 |
| A. Marty | 5 | 4 | 0.83 |
| Christophe Escriba | 6 | 385 | 24.52 |
| J-Y. Fourniols | 7 | 11 | 1.55 |
| D. Esteve | 8 | 4 | 0.49 |