Title
Compact models for memristors based on charge-flux constitutive relationships
Abstract
This paper introduces compact models for memristors. The models are developed based on the fundamental constitutive relationships between charge and flux of memristors. The modeling process, with a few simple steps, is introduced. For memristors with limited resistance ranges, a simple method to find their constitutive relationships is discussed, and examples of compact models are shown for both current-controlled and voltage-controlled memristors. Our models satisfy all of the memristor properties such as frequency dependent hysteresis behaviors and also unique boundary assurance to simulate memristors whether they behave memristively or resistively. Our models are implementable in circuit simulators, including SPICE, Verilog-A, and Spectre.
Year
DOI
Venue
2010
10.1109/TCAD.2010.2042891
IEEE Trans. on CAD of Integrated Circuits and Systems
Keywords
Field
DocType
charge-flux constitutive relationship,simple step,constitutive relationship,circuit simulator,fundamental constitutive relationship,simple method,limited resistance range,voltage-controlled memristors,compact model,memristor property,frequency dependent hysteresis behavior
Memristor,Computer science,Spice,Electronic engineering,Flux,Verilog-A
Journal
Volume
Issue
ISSN
29
4
0278-0070
Citations 
PageRank 
References 
50
4.89
2
Authors
3
Name
Order
Citations
PageRank
Sang-Ho Shin142041.46
Kyungmin Kim216820.97
Sung-Mo Steve Kang31198213.14