Name
Abstract | ||
|---|---|---|
In this paper, a novel design of bi-directional pumping scheme is proposed and analyzed for the first time in an attempt to verify its validity as a mean for loss reduction and gain enhancement in Raman silicon laser. FCA loss is identified as the key loss contributor in silicon Raman process which is highly dependent on peak input pump power level, from the simulation results to account for various loss mechanisms in on-off gain simulation. To solve the problem of high threshold and low gain obtained in Raman silicon laser, bi-directional pumping scheme is proposed to have the effects of loss reduction by peak power limitation and Raman gain enhancement through average power increment. This is also substantiated by simulation of average and instantaneous pump power level along the silicon waveguide length. With bi-directional pumping, Raman silicon laser could improve in its threshold power and gain/slope efficiency to enable it better application credibility. |
Year | DOI | Venue |
|---|---|---|
2008 | 10.1145/1509315.1509391 | ICAIT '08 Proceedings of the 2008 International Conference on Advanced Infocomm Technology |
Keywords | DocType | Citations |
raman silicon laser,fca loss,raman gain enhancement,average power increment,gain enhancement,instantaneous pump power level,loss reduction,analysis,key loss contributor,silicon raman laser,silicon photonic,on-off gain simulation,raman laser,low gain,silicon photonics | Conference | 0 |
PageRank | References | Authors |
0.34 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Ying Huang | 1 | 0 | 0.34 |
| M. Tang | 2 | 0 | 10.48 |
| Perry Ping Shum | 3 | 29 | 16.96 |
| Jing Zhang | 4 | 4 | 1.11 |
| John H. Lau | 5 | 4 | 1.52 |