Name
Title | ||
|---|---|---|
Si Nanocrystal MOSFET with Silicon Nitride Tunnel Insulator for High-rate Random Number Generation |
Abstract | ||
|---|---|---|
This paper presents a floorplanning method based on particle swarm optimization (PSO). We adopted the B*-tree floorplan structure to generate an initial stage with overlap free for placement and utilized PSO to find out the potential optimal placement ... |
Year | DOI | Venue |
|---|---|---|
2006 | 10.1109/ISVLSI.2006.83 | ISVLSI |
Keywords | Field | DocType |
particle swarm optimization,potential optimal placement,floorplanning method,high-rate random number generation,utilized pso,si nanocrystal mosfet,initial stage,tree floorplan structure,silicon nitride tunnel insulator,nanocrystals,mobile network,nanoelectronics,cryptography,computer security,random number generation,mobile communication,sin,si,silicon,application software | Nanoelectronics,Mobile network security,Nanocrystal,MOSFET,Random number generation,Insulator (electricity),Materials science,Electrical engineering,Optoelectronics,Silicon,Silicon nitride | Conference |
ISBN | Citations | PageRank |
0-7695-2533-4 | 1 | 0.44 |
References | Authors | |
1 | 7 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Ryuji Ohba | 1 | 1 | 0.78 |
| Daisuke Matsushita | 2 | 1 | 0.78 |
| Koichi Muraoka | 3 | 1 | 0.44 |
| Shinichi Yasuda | 4 | 21 | 6.57 |
| Tetsufumi Tanamoto | 5 | 24 | 6.40 |
| K. Uchida | 6 | 10 | 3.25 |
| Shinobu Fujita | 7 | 180 | 22.11 |