Title
Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search Engines
Abstract
Large-capacity content addressable memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems. Convergence of disparate technologies, which are compatible with CMOS processing, may allow extension of Moore's Law for a few more years. This paper provides a new approach towards the design and modeling of Memory resistor (Memristor)-based CAM (MCAM) using a combination of memristor MOS devices to form the core of a memory/compare logic cell that forms the building block of the CAM architecture. The non-volatile characteristic and the nanoscale geometry together with compatibility of the memristor with CMOS processing technology increases the packing density, provides for new approaches towards power management through disabling CAM blocks without loss of stored data, reduces power dissipation, and has scope for speed improvement as the technology matures.
Year
DOI
Venue
2011
10.1109/TVLSI.2010.2049867
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Keywords
Field
DocType
cmos processing,disparate technology,mos transistor,memristor mos content addressable,content addressable memory,hybrid architecture,memristor mos device,new approach,model- ing,cmos processing technology,memory,index terms—memristor,future high performance search,memristor-mos hybrid architecture,large-capacity content addressable memory,power dissipation,mcam,cam architecture,disabling cam block,modeling,search engines,search engine,associative memory,memristors,computer aided manufacturing,cmos integrated circuits,logic circuits,low power electronics
Power management,Memristor,Logic gate,Content-addressable memory,Computer science,Electronic engineering,CMOS,Content-addressable storage,Memistor,Integrated circuit
Journal
Volume
Issue
ISSN
19
8
1063-8210
Citations 
PageRank 
References 
33
2.60
9
Authors
6
Name
Order
Citations
PageRank
K. Eshraghian1507.12
Kyoung-Rok Cho221731.77
Omid Kavehei327331.47
Sung-Mo Steve Kang41198213.14
D. Abbott5332.60
Sung-Mo Steve Kang6353.05