Paper Info
Title
A Modified Charge Pumping Method for Measuring Interface States Up to the Ghz Range
Abstract
In this paper we present a modified on-chip charge pumping method for measuring the interface states in ultra-thin gate oxide complementary metal-oxide-semiconductor (CMOS) technology. The proposed method, which characterizes oxide interface states by applying pulse frequencies up to the GHz range, is used to evaluate the evolution of interface states due to dynamic negative bias temperature instability stress on the p-channel field-effect transistor (pFET). The results show that charge pumping increases linearly at frequencies up to the GHz range and that the time dependence of interface states due to AC negative bias temperature instability (NBTI) stress increases with a power law distribution. In addition, we demonstrate experimentally that the VTH shift due to AC NBTI stress depends on interface states and oxide traps.
Year
DOI
Venue
2009
10.1007/s10836-009-5104-8
J. Electronic Testing
Keywords
Field
DocType
oxide interface state,interface state,stress increase,dynamic negative bias temperature,oxide trap,modified charge pumping method,instability stress,increases linearly,ghz range,ultra-thin gate oxide,ac nbti stress,chargepumping.on-chip.nbti.interface state.reliability.cmos,measuring interface states,reliability,nbti,field effect transistor,complementary metal oxide semiconductor,charge pump,negative bias temperature instability,chip,cmos,power law distribution
Charge pumping,Oxide,Pareto distribution,Computer science,CMOS,Electronic engineering,Negative-bias temperature instability,Gate oxide,Transistor
Journal
Volume
Issue
ISSN
25
4-5
1573-0727
Citations 
PageRank 
References 
0
0.34
2
Authors
1
Name
Order
Citations
PageRank
R. Fernández172.19