Name
Abstract | ||
|---|---|---|
The shear strength of the under bump metallurgy (UBM) structure in both the high-melting solder bump and low-melting solder bump after aging were evaluated. Scanning electron microscopy and transmission electron microscopy were examined in the intermetallic compounds (IMCs) and bump joint profiles at the interface between solder and UBM. In 900 h aging experiments, the maximum shear strength of Sn–97wt.%Pb and Sn–37wt.%Pb decreased by 25% and 20%, respectively. The growth of Cu6Sn5 and Cu3Sn was ascertained by the aging treatment. The crack path changes from the interior of a solder to the IMC interface. Compare with the Cu–Sn IMC, the amount of Ni–Sn IMC was small. The Ni layer is considered as the diffusion barrier. |
Year | DOI | Venue |
|---|---|---|
2003 | 10.1016/S0026-2714(03)00060-X | Microelectronics Reliability |
Keywords | Field | DocType |
scanning electron microscopy,intermetallic compound,shear strength,transmission electron microscopy | Shear strength,Intermetallic,Isothermal process,Scanning electron microscope,Under bump metallurgy,Transmission electron microscopy,Diffusion barrier,Soldering,Metallurgy,Engineering | Journal |
Volume | Issue | ISSN |
43 | 5 | 0026-2714 |
Citations | PageRank | References |
4 | 1.09 | 0 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| K.S. Kim | 1 | 4 | 1.09 |
| C.H. Yu | 2 | 4 | 1.09 |
| N.H. Kim | 3 | 4 | 1.09 |
| N.K. Kim | 4 | 4 | 1.09 |
| H.J. Chang | 5 | 4 | 1.09 |
| E.G. Chang | 6 | 4 | 1.43 |