Title
Design and Scaling of W-Band SiGe BiCMOS VCOs
Abstract
This paper discusses the design of 77-106 GHz Colpitts VCOs fabricated in two generations of SiGe BiCMOS technology, with MOS and HBT varactors, and with integrated inductors. Based on a study of the optimal biasing conditions for minimum phase noise, it is shown that VCOs can be used to monitor the mm-wave noise performance of SiGe HBTs. Measurements show a 106 GHz VCO operating from 2.5 V with p...
Year
DOI
Venue
2007
10.1109/JSSC.2007.900769
IEEE Journal of Solid-State Circuits
Keywords
Field
DocType
Silicon germanium,Germanium silicon alloys,BiCMOS integrated circuits,Phase noise,Voltage-controlled oscillators,Power generation,Heterojunction bipolar transistors,Varactors,Inductors,Condition monitoring
Colpitts oscillator,BiCMOS,Computer science,Cascode,Phase noise,W band,Electronic engineering,Voltage-controlled oscillator,Heterojunction bipolar transistor,MOSFET,Electrical engineering
Journal
Volume
Issue
ISSN
42
9
0018-9200
Citations 
PageRank 
References 
13
1.91
2
Authors
7
Name
Order
Citations
PageRank
Sean T. Nicolson110317.97
Kenneth H. K. Yau28822.21
Pascal Chevalier35210.92
Alain Chantre4223.95
Bernard Sautreuil5539.88
Keith W. Tang6152.36
Sorin P. Voinigescu722153.57