Name
Title | ||
|---|---|---|
Realizing high breakdown voltage for a novel interface charges islands structure based on partial-SOI substrate |
Abstract | ||
|---|---|---|
A novel interface charge islands partial-SOI (ICI PSOI) high voltage device with a silicon window under the source and its mechanism are studied in this paper. ICI PSOI is characterized by a series of equidistant high concentration n+-regions on the bottom interface of top silicon layer. On the condition of high-voltage blocking state, inversion holes located in the spacing of two n+-regions effectively enhance the electric field of the buried oxide layer (EI) and reduce the electric field of the silicon layer (ES), resulting in a high breakdown voltage (VB). It is shown by the simulations that the enhanced field ΔEI and reduced field ΔES by the accumulated holes reach to 449V/μm and 24V/μm, respectively, which makes VB of ICI PSOI increase to 663V from 266V of the conventional PSOI on 5μm silicon layer and 1μm buried oxide layer with the same silicon window length. On-resistance of ICI PSOI is lower than that of the conventional PSOI. Moreover, self-heating-effect is alleviated by the silicon window in comparison with the conventional SOI at the same power of 1mW/μm. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1016/j.microrel.2011.11.007 | Microelectronics Reliability |
Keywords | Field | DocType |
null | Equidistant,Silicon on insulator,Electric field,Buried oxide,Soi substrate,Electronic engineering,Breakdown voltage,Engineering,High voltage,Silicon | Journal |
Volume | Issue | ISSN |
52 | 4 | 0026-2714 |
Citations | PageRank | References |
0 | 0.34 | 1 |
Authors | ||
10 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Shengdong Hu | 1 | 8 | 3.18 |
| Jun Luo | 2 | 0 | 0.34 |
| Kaizhou Tan | 3 | 0 | 0.34 |
| Ling Zhang | 4 | 145 | 39.35 |
| Zhaoji Li | 5 | 23 | 7.27 |
| Bo Zhang | 6 | 328 | 42.62 |
| Jianlin Zhou | 7 | 0 | 0.34 |
| Ping Gan | 8 | 0 | 0.68 |
| Guolin Qin | 9 | 0 | 0.34 |
| Zhengyuan Zhang | 10 | 5 | 3.10 |