Paper Info
Title
High Fill Factor Low-Voltage CMOS Image Sensor Based on Time-to-Threshold PWM VLSI Architecture
Abstract
This paper presents a CMOS image sensor (CIS) VLSI architecture based on a single-inverter time-to-threshold pulsewidth modulation circuitry capable of operating as low as 330-mV supply voltage while retaining a signal-to-noise ratio of 24 dB; an important characteristic being demanded by very low voltage portable CIS-based equipment such as disposable medical cameras and on-chip autonomous wireless security vision systems. A 64 × 64 pixel array was fabricated using standard 130-nm CMOS process consuming only 5.9 nW/pixel with integration time of 2 ms at +0.5 V supply. The high fill factor of 58% facilitated a better SNR at a low supply voltage when compared with other CIS architectures. The pixel has a dynamic range of 54 dB with 7.8 frame per second.
Year
DOI
Venue
2014
10.1109/TVLSI.2013.2275161
IEEE Transactions on Very Large Scale Integration Systems
Keywords
Field
DocType
voltage 330 mv,cmos image sensors,voltage 0.5 v,cmos image sensors (cis),time-to-threshold pwm vlsi architecture,size 130 nm,high fill factor,on-chip autonomous wireless security vision systems,low-power electronics,cmos image sensors(cis),time-to-threshold conversion,pulsewidth modulation circuitry,vlsi,medical cameras,picture size 64 pixel,time-to-threshold conversion.,pulsewidth modulation(pwm),low-voltage cmos image sensor,pulse width modulation,pulsewidth modulation (pwm),signal to noise ratio,low power electronics,threshold voltage,lighting
Dynamic range,Image sensor,Computer science,Voltage,Pulse-width modulation,Electronic engineering,Low voltage,Frame rate,Pixel,Time delay and integration,Electrical engineering
Journal
Volume
Issue
ISSN
22
7
1063-8210
Citations 
PageRank 
References 
0
0.34
0
Authors
4
Name
Order
Citations
PageRank
Kyoung-Rok Cho121731.77
Sang-jin Lee236040.96
Omid Kavehei327331.47
Kamran Eshraghian410127.54