Name
Title | ||
|---|---|---|
Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity. |
Abstract | ||
|---|---|---|
•Electron conduction mechanism of tungsten trioxide (WO3) was studied.•N2 annealing was found to decrease the resistivity of WO3.•WO3 thin film was fabricated by necking nanoparticles using spray processes. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1016/j.microrel.2014.10.012 | Microelectronics Reliability |
Keywords | Field | DocType |
Electron transport mechanism,Monoclinic tungsten trioxide powder thin film,Resistivity,Activation energy | Analytical chemistry,Tungsten trioxide,Inorganic chemistry,Electronic engineering,Annealing (metallurgy),Engineering,Thin film,Thermal conduction,Lithium-ion battery,Lithium,Electrical resistivity and conductivity,Electrode | Journal |
Volume | Issue | ISSN |
55 | 2 | 0026-2714 |
Citations | PageRank | References |
1 | 0.48 | 0 |
Authors | ||
12 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Wei Li | 1 | 3 | 1.59 |
| Akito Sasaki | 2 | 3 | 1.93 |
| Hideyuki Oozu | 3 | 3 | 1.59 |
| Katsuaki Aoki | 4 | 3 | 1.59 |
| Kuniyuki Kakushima | 5 | 9 | 11.63 |
| Yoshinori Kataoka | 6 | 4 | 3.32 |
| Akira Nishiyama | 7 | 3 | 1.93 |
| Nobuyuki Sugii | 8 | 4 | 5.26 |
| Hitoshi Wakabayashi | 9 | 3 | 3.95 |
| Kazuo Tsutsui | 10 | 6 | 9.26 |
| Kenji Natori | 11 | 167 | 13.29 |
| Hiroshi Iwai | 12 | 12 | 12.99 |