Paper Info
Title
MOS-IGBT power devices for high-temperature operation in smart power SOI technology.
Abstract
We propose a new MOS-IGBT device with improved characteristics for high-temperature operation. It is achieved by inserting in the same LDMOS device p(+) diffusions in the drain with various N(+)/P(+) ratios. 3D TCAD simulations are used to optimize the original structure in particular, to validate drain and source engineering solutions aimed at providing a latch-up free operation. (C) 2011 Elsevier Ltd. All rights reserved.
Year
DOI
Venue
2011
10.1016/j.microrel.2011.07.037
MICROELECTRONICS RELIABILITY
Field
DocType
Volume
Silicon on insulator,LDMOS,Smart power,Power semiconductor device,Insulated-gate bipolar transistor,Electronic engineering,Engineering,Electrical engineering
Journal
51
Issue
ISSN
Citations 
SP9-11
0026-2714
0
PageRank 
References 
Authors
0.34
0
2
Name
Order
Citations
PageRank
Houssam Arbess101.35
M. Bafleur277.06