Name
Title | ||
|---|---|---|
Threshold voltage instability of nanoscale charge trapping non-volatile memory at steady phase. |
Abstract | ||
|---|---|---|
•Vt instability at steady phase is attributed to lateral charges transport model.•Higher P/E cycle counts increase Vt instability at steady phase.•Higher bake temperatures enhance Vt instability at steady phase.•Cycling alters trapped charge profile that dictates Vt instability at steady phase. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1016/j.microrel.2014.05.006 | Microelectronics Reliability |
Keywords | Field | DocType |
Activation energy,Charge trapping non-volatile memory,Data retention,Nanoscale semiconductors,Threshold voltage instability | Nitride,Instability,Electronic engineering,Trapping,Annealing (metallurgy),Non-volatile memory,Engineering,Power law,Threshold voltage,Activation energy | Journal |
Volume | Issue | ISSN |
54 | 11 | 0026-2714 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Meng Chuan Lee | 1 | 0 | 1.01 |
| Hin Yong Wong | 2 | 0 | 2.03 |
| Lini Lee | 3 | 0 | 1.69 |